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hexfet power mosfet notes through are on page 8 features and benefits features benefits pqfn 5x6 mm applications ? control mosfet for high frequency buck converters v ds 25 v r ds (o n ) m a x (@ v gs = 10v ) 6.0 m q g (ty p i c a l ) 7.0 n c r g (ty p i c a l) 0.6 i d (@ t c( b o tt o m ) = 25 c) 51 a absolute maximum ratings par a m e t e r u ni t s v ds d r ai n- t o- s ou r c e v o l t ag e v gs gate-to-source voltage i d @ t a = 25 c continuous drain current, v gs @ 10v i d @ t a = 70 c continuous drain current, v gs @ 10v i d @ t c( b o tt o m ) = 25 c continuous drain current, v gs @ 10v i d @ t c( b o tt o m ) = 10 0 c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c m ax. 15 33 60 2 0 25 12 51 -5 5 t o + 1 5 0 3. 6 0. 02 9 26 low charge (typical 7nc) lower switching losses low rg (typical 0.6 ) lower switching losses low thermal resistance to pcb (<4.9c/w) increased power density 100% rg tested increased reliability low p r of ile ( < 0. 9 m m ) results in increased power density i n dus t r y - s t andar d p i nout ? multi-vendor compatibility com pat ible wit h e x is t i ng s u r f ac e m ount t e c hniq ues easier manufacturing rohs com pliant cont ain i ng no lead, no b r om id e and no halogen environmentally friendlier m s l1, i ndus t r ial q ualif ic at ion increased reliability

! fo r m q ua n t i t y i r fh 5255 t r p b f p q f n 5 m m x 6m m t ape and r e e l 4 0 00 i rfh5255tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice # 259 o r de r a bl e pa r t n u m b e r p a cka ge type st a n da r d pa c k no t e http://

! s d g thermal resistance par a m e t e r t yp. m ax. u n i t s r jc (bottom) junction-to-case ??? 4. 9 r jc (top) junction-to-case ??? 15 c/w r ja junction-to-ambient ??? 35 r ja (<10s) junction-to-ambient ??? 22 s t at ic @ t j = 2 5 c (unl e s s othe rw i s e s pe c i f i e d) par a m e t e r m i n . t yp. m ax. u n i t s bv ds s d r ai n- t o - s o ur c e b r ea k do w n v ol t a ge 25 ? ?? ?? ? v ? v ds s / t j b r ea kd ow n v o l t a g e t e m p . c o ef f i ci e n t ? ?? 0. 02 ? ? ? v / c r ds ( o n ) s t a t i c d r ai n- t o - s ou r c e o n - r e s i s t a nce ? ?? 5 . 0 6 . 0 ?? ? 8 . 8 10 . 9 v gs ( t h ) g a t e th r e sh ol d v o l t ag e 1 . 3 5 1 . 8 0 2 .35 v v gs ( t h ) g a t e th r e sh ol d v o l t ag e c o e f f i ci e n t ? ?? - 6 . 3 ? ? ? m v / c i ds s d r ai n- t o - s o ur c e l ea k ag e c ur r en t ?? ? ? ?? 5 ??? ??? 15 0 i gs s g at e- t o - s o ur c e f or w a r d le ak ag e ?? ? ? ?? 10 0 g a t e - t o- s o u r ce r e ve r s e le a k ag e ? ?? ?? ? - 10 0 gf s f or w a r d t r an scon d u c t a nce 4 8 ? ? ? ? ? ? s q g to t a l g a t e c h ar g e ?? ? 1 4. 5 ? ? ? n c q g to t a l g a t e c h ar g e ?? ? 7 . 0 11 q gs 1 p r e - v t h g a t e - t o - s o ur c e c h ar ge ?? ? 1. 6 ?? ? q gs 2 p o s t - v t h g at e- t o- s ou r c e c har g e ?? ? 1. 2 ?? ? q gd g at e- t o - d r ai n c ha r ge ?? ? 2. 7 ?? ? q go dr g a t e c h ar g e o v er d r i v e ? ? ? 1. 5 ? ? ? s e e fi g. 17 & 1 8 q sw swi t c h ch a r g e ( q gs 2 + q gd ) ?? ? 3. 8 ?? ? q os s o ut put c h ar g e ?? ? 6. 0 ?? ? n c r g g a t e r e si st a n ce ? ? ? 0 . 6 ??? t d( on) tu r n - o n d e l a y ti m e ?? ? 7 . 9 ?? ? t r r i s e ti m e ?? ? 1 0. 7 ? ? ? t d( of f ) t u rn -off de l a y t i m e ? ? ? 6 . 5 ? ? ? t f fa ll ti m e ?? ? 3 . 8 ?? ? c is s i n p u t c a p a ci t a nce ? ?? 98 8 ? ?? c os s o u t p u t c a p a ci t a nce ? ?? 28 9 ? ?? c rs s r e ve r s e tr a n sf er c a p a ci t a nc e ? ?? 12 7 ??? a v al a nche characteristics pa r a m e t e r un its e as s i ngl e p u l s e a v al an c he e ne r g y mj i ar a v al a n ch e c u r r e nt a d i o d e c h ar a ct er i stic s p a ra m e te r m in . t y p . m a x . u n i t s i s c on t inuous so ur c e c u r r en t ( b o dy d i od e) i sm p u l s ed s ou r c e c ur r e nt (body diode) v sd d i od e f or w a r d v o l t ag e ? ?? ?? ? 1. 0 v t rr r e ve r se r e co ver y t i me ? ? ? 1 1 1 7 n s q rr r e ve r s e r e co ver y c h a r ge ? ? ? 7 . 8 1 2 nc t on fo r w a r d tu r n - o n t i m e ti m e i s d o m i na t e d by pa r a s i t i c i n du c t a n c e m o sf et s y m b o l na ns a pf nc v ds = 13 v ?? ? v gs = 20 v v gs = - 2 0 v ?? ? ? ?? 6 0 ?? ? ? ?? 5 1 c o n d it io n s v gs = 0v , i d = 25 0 a r e fe r e n c e to 2 5 c , i d = 1m a v gs = 10 v , i d = 15a c o n d it io n s s e e fi g. 15 ma x . 53 15 ? = 1. 0m h z t j = 2 5 c , i f = 15 a , v dd = 13 v di / d t = 30 0a / s t j = 2 5 c , i s = 15a , v gs = 0v sh ow i n g t h e i n te g r a l re v e rs e p - n j u nct i o n di od e . ?? ? r g =1 . 0 v ds = 13 v , i d = 15 a v ds = 20 v , v gs = 0 v , t j = 12 5 c a i d = 15 a i d = 15 a v gs = 0v v ds = 13 v v ds = 20 v , v gs = 0 v v ds = v gs , i d = 25 a v gs = 4. 5v , i d = 15 a v gs = 4. 5v ty p. m v ds = 16 v , v gs = 0 v v dd = 13 v , v gs = 4. 5v v gs = 10 v , v ds = 1 3 v , i d = 15 a

! fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.50v 3.75v 3.50v 3.25v 3.00v 2.75v bottom 2.50v 60 s pulse width tj = 25c 2.50v 1.5 2 2.5 3 3.5 4 4.5 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1. 8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 15a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 4 8 12 16 20 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v vds= 5.0v i d = 15a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60 s pulse width tj = 150c vgs top 10v 4.50v 3.75v 3.50v 3.25v 3.00v 2.75v bottom 2.50v
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! fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0. 2 0. 4 0. 6 0 . 8 1. 0 v sd , s our ce- t o- d r ai n v o l t age ( v ) 0. 1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , c a se t e m per at ur e ( c ) 0 5 10 15 20 25 30 35 40 45 50 55 i d , d r a i n c u r r e n t ( a ) -7 5 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a id = 1.0ma id = 150 a id = 25 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0. 001 0. 01 0. 1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0. 20 0.10 d = 0. 50 0. 02 0.01 0. 05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0 1 10 100 v ds , d r ai n- t o - s our ce v o l t age ( v ) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec
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! fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (b r ) d s s i as r g i as 0.01 t p d. u. t l v ds + - v dd d r i ver a 15 v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d( o n) t d( o ff) t r t f
1 0.1 + - 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 5 10 15 20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 15a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 25 50 75 100 125 150 175 200 225 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d t o p 4 . 1 3 a 8 .4 0 a b o tto m 1 5 a

! fig 16.

for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vd s vg s id vg s ( t h ) qg s 1 qg s 2 qg d qg o d r ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' 1k vc c du t 0 l s
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! pqfn 5x6 outline "b" package details

http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "b" part marking xxxx xywwx xxxxx international rectifier logo part num ber (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier l o t co de ( e ng mode - mi n l as t 4 di gi ts of e a t i # ) ( p r od mo de - 4 d i gi t s of s p n c ode)
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! qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.47mh, r g = 50 , i as = 15a.
pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ms l 1 (per je de c j-s t d-020d ??? ) rohs com p l i ant y e s p q f n 5m m x 6m m qu a lif ic at io n in f o rma t io n ? m o is t u r e s ens it iv it y lev el q ualif ic at ion leve l in d u s t r i a l ?? ( p e r je d e c je s d 4 7 f ?? ? g u id e lin e s ) pqfn 5x6 outline "b" tape and reel ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ d a te c o m m e n ts ? u pdat ed o r der i ng i n f or m at i o n t o r ef l e c t t h e e n d- o f - l i f e ( e o l) of t he m i ni - r ee l opt i on ( e o l not i c e # 259) ? u pdat e d da t a s heet w i t h new i r c or p or at e t em pl at e r e vi si o n h i st o r y 12/16/2 01 3

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